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碳化硅电热元件在不同气氛下的使用温度和表面负荷


气氛

 

Atmosphere

炉温(℃)

 

Furnace

表面负荷

(W/cm2

Surface Load

对元件的影响

 

Effect On Elements

解决办法


Solution

1290

3.8

与sic作用生成甲烷减少sio2保护膜 Decreasing SiO2 protective film by Acting with SiC to generate Methane

露点激活

Make it active at dew point

CO₂

1450

3.1

腐蚀碳化硅  Attacking sic

用石英管保护

Protecting by quartz tube

18%CO

1500

4.0

无影响  No

 

20%CO

130

3.8

吸附碳粒影响sio2保护膜   Affecting SiO2 protective film by Adsorbing C grains

 

卤素

704

3.8

腐蚀碳化硅减少sio2保护膜 Decreasing SiO2 protective film by eroding SiC

用石英管保护

Protecting by quartz tube

碳氢化合物

1310

3.1

吸附碳粒致热污染,分解的碳沉积,易造成电气故障  Causing hot pollution by adsorbing C grains

送进充分的空气

Filling with plenty of air

1290

3.1

与sic作用反应生成甲烷,减少sic2保护膜 Decreasing SiO2 protective film by Acting with SiC to generate Methane

露点激活

Make it Active at dew point

甲烷

1370

3.1

吸附碳粒致热污染  Causing hot pollution by adsorbing C grains

 

N

1370

3.1

与sic反应形成氮化硅绝缘 Generating SiN insulating layer by acting with SiC

 

Na

1310

3.8

侵蚀碳化硅  Eroding sic

用石英管保护

Protecting by quartz tube

SO2

1310

3.8

侵蚀碳化硅  Eroding sic

用石英管保护

Protecting by quartz tube

真空

1204

3.8

 

 

1310

3.8

碳化硅被氧化 Sic oxidized

 

水(不同含量)

1090-1370

3.1-3.6

与sic作用生成硅的水化物

Generating hydrate of silicon by acting on SiC